Samsung will launch the eighth generation of V-NAND flash memory: the number of layers exceeds 200, 512GB is only 0.8mm thick

Samsung will launch the eighth generation of V-NAND flash memory: the number of layers exceeds 200, 512GB is only 0.8mm thick

As a big brother in the global NAND flash memory market, Samsung will be ahead of other manufacturers in 3D flash memory. At the Samsung Technology Forum a few days ago, Samsung announced the details of the eighth generation of V-NAND, with a stack of more than 200 layers and a capacity up to The thickness of 1Tbit and 512GB capacity is only 0.8mm, which can be used in mobile phones. Samsung’s V-NAND flash memory has now developed to the seventh generation of V-NAND V7, with 176 layers of stack, and the core capacity of the TLC version is 512Gbit, while the upcoming V-NAND V8 will have more than 200 layers—Samsung did not mention the specifics. How many layers, but the previous report pointed out that it is 228 layers, an increase of about 30%, and the storage density has increased by about 40%. The single core capacity of V-NAND V8 flash memory has also doubled from the previous 512Gbit to 1Tbit, and the performance is also stronger. The IO interface rate has been increased from 2Gbps to 2.4Gbps, and the performance is more compatible with the latest PCIe 5.0 standard. Thanks to the larger storage capacity. The thickness of V-NAND V8 flash memory can still be controlled at a reasonable level, and the package 512GB capacity does not exceed 0.8.

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